BSB012N03LX3 G替代料PC2R4NG，30V180A 2.4mΩ TO-220封裝

型號(hào)：PC2R4NG

電壓電流：30V180A

內(nèi)阻：2.4mΩ

封裝：TO-220封裝

Description：

This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge.It can be used in a wide variety of applications.?

Features：

1) VDS=30V,ID=180A,RDS(ON)<2.4mΩ@VGS=10V

2) Low gate charge. 3) Green device available.?

4) Advanced high cell denity trench technology for ultra low RDS(ON).?

5) Excellent package for good heat dissipation.