BSF035NE2LQ的替代料號DC006NG，30V80A 5.5mΩ N管,可用于鋰電保護(hù)板

型號：DC006NG

電壓電流：30V80A

內(nèi)阻：5.5mΩ

N管

封裝：TO-252

應(yīng)用：鋰電保護(hù)板

Description：

This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge.It can be used in a wide variety of applications.

Features：

1) VDS=30V,ID=80A,RDS(ON)<5.5mΩ@VGS=10V

2) Low gate charge.

3) Green device available.

4) Advanced high cell denity trench technology for ultra Iow RDS(ON).

5) Excellent package for good heat dissipation.