DE085PG可替代IRFR9024N低壓MOS場(chǎng)效應(yīng)管TO-252 P管 -55V-11A
DE085PG可替代IRFR9024N低壓MOS場(chǎng)效應(yīng)管TO-252 P管 -55V-11A
型號(hào)：DE085PG
電壓電流：-55V-11A
P管
內(nèi)阻：70mΩ
封裝：TO-252
Description：
This P-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge.It can be used in a wide variety of applications.?
Features：
1) VDS=-60V,ID=-18A,RDS(ON)<70mΩ@VGS=-10V
2) Low gate charge.?
3) Green device available.?
4) Advanced high cell denity trench technology for ultra Iow RDS(ON).?
5) Excellent package for good heat dissipation.
