功率MOS場(chǎng)效應(yīng)管DE018NG-F可替代50N06，60V50A 17mΩ

型號(hào)：DE018NG-F

電壓電流：60V50A?

內(nèi)阻：17mΩ

封裝：TO-252

Description：

This N-Channel MOSFET uses advanced trench technology and

design to provide excellent RDS(on) with low gate charge.

It can be used in a wide variety of applications.

Features：

1) VDS=60V,ID=50A,RDS(ON)<17mΩ@VGS=10V

2) Low gate charge.?

3) Green device available.?

4) Advanced high cell denity trench technology for ultra Iow RDS(ON).?

5) Excellent package for good heat dissipation.