FNK06N02D替換型號DB005NG，P TO P兼容替代FNK06N02D，可用于太陽能燈、數(shù)碼產(chǎn)品鋰電
FNK06N02D替換型號DB005NG，P TO P兼容替代FNK06N02D，可用于太陽能燈、數(shù)碼產(chǎn)品鋰電池保護(hù)
型號：DB005NG
N管
電壓電流：20V75A
內(nèi)阻：RDS(ON)<5mΩ@VGS=4.5V
封裝：TO-252
應(yīng)用：太陽能燈、數(shù)碼產(chǎn)品鋰電池保護(hù)
Description：
This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge.It can be used in a wide variety of applications.?
Features：
1) VDS=20V,ID=75A,RDS(ON)<5mΩ@VGS=4.5V
2) Low gate charge.?
3) Green device available.?
4) Advanced high cell denity trench technology for ultra Iow RDS(ON).?
5) Excellent package for good heat dissipation.
